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Industry News

Peregrine Opens New England Design Center

March 29, 2006
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Peregrine Semiconductor Corp., a supplier of advanced RF CMOS ICs, announced the opening of its third engineering design site, the New England Design Center (NEDC), adding technical resources to fuel the company’s high growth momentum. Based in Nashua, NH, a concentrated locality of RF, analog and mixed-signal expertise, the initial group is comprised of highly experienced RF/microwave design and product development engineers with an average of 17 years experience.


“The launch of the NEDC team allows us to further serve an industry seeking more highly integrated RF solutions for multimode operation of next-generation protocols such as GSM/EDGE, CDMA, WCDMA/UMTS and WLAN,” said Dan Nobbe, vice president of engineering at Peregrine. “UltraCMOS™ technology creates a virtual blank slate for out-of-the-box engineering, and now RFICs can extend into new markets that will benefit from a higher level of integration and functionality achievable today only with Peregrine’s silicon-on-sapphire process.”

The environmentally-friendly UltraCMOS technology delivers decidedly superior performance advantages over competing mixed-signal processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

“We’ve had extremely high interest in joining our company,” said Jim Cable, CEO and president of Peregrine. “Innovative engineers want to be on the leading edge and do work that will enable change. In the past year, the Peregrine engineering team has made remarkable breakthroughs such as the HaRP™ technology invention, which is transforming advanced RF architectures. We expect continuous expansion in New England, and look to this center as a catalyst for growth.”

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