advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News / Amplifiers / Semiconductors / Integrated Circuits

600 W UHF PowerTransistor

May 12, 2011
/ Print / Reprints /
| Share More
/ Text Size+

NXP Semiconductors has introduced an ultra high frequency (UHF) 600 W RF power transistor that is a LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the full UHF band from 470 to 860 MHz, the transistor can deliver 120 W average DVB-T signal power with efficiencies greater than 31 percent. Featuring excellent linearity, high gain of 21 dB and ruggedness corresponding to VSWR greater than 40:1, the BLF888A is ideal for advanced digital transmitter applications.


The performance of the BLF888A is enabled by NXP’s 50 V high voltage LDMOS process technology in combination with advanced thermal concepts, resulting in high power density and thermal resistance as low as 0.15 K/W. As a result, the BLF888A allows broadcast equipment manufacturers to optimize existing or new transmitter installations for performance and total cost of ownership. For complete power amplifier line-ups, the BLF888A combines optimally with the BLF881 driver transistor. The transistor is available in two versions: BLF888A, a bolt-down package and BLF888AS, an earless package, which enables a more compact PCB design. The BLF888AS can be soldered to achieve a further decrease in junction temperature.

NXP Semiconductors,
Eindhoven, The Netherlands,
www.nxp.com

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement