Epic Communications Inc. (Epicom) has announced a series of next generation W-CDMA/HSPA power amplifiers. These PA products are specifically designed for 3G portable devices and mobile phones, and are compatible with industry leading 3G chipset solutions. Epicom plans to offer more advanced PA products for other 3G standards such as TD-SCDMA, CDMA2000/EV-DO, and 4G standards of LTE and TD-LTE.

The latest series of W-CDMA/HSPA power amplifiers is designed specifically for the most popular UMTS/W-CDMA frequency bands (Bands I, II, V and VIII). These 3G PA products feature high linearity, high power added efficiency, ultra-low quiescent current, excellent temperature stability and very attractive performance/cost ratio. Epicom’s PAs are provided in 3 by 3 mm packages with the same dimensions, pin-out assignments and features as other major suppliers, and are compatible with the next generation 3G PA standards.

Based on advanced BiFET wafer process that combines InGaP bipolar HBT and GaAs PHEMT processes into one wafer, all key features and functional blocks of the 3G PA are integrated into a single cost-effective chip while delivering good performance.

In comparison to 2G or 2.5G (GSM/GPRS/EDGE) PAs, 3G PAs require much higher linearity to support high data rate transmission and better power added efficiency (PAE) for longer battery life. Epicom’s 3G PAs feature digitally controlled tri-power mode (high, medium, low) operation and ultra-low quiescent current. The compact 3 x 3 x 1 mm package form factor includes both the required directional coupler and all matching circuits, and it is fully compliant with next generation 3G/4G PA footprint, feature and performance requirements.