Y. Tkachenko, Y. Zhao, C. Wei and D. Bartle

Articles by Y. Tkachenko, Y. Zhao, C. Wei and D. Bartle

Enhancement/Depletion Mode InGaP/AlGaAs PHEMT for High Efficiency Power Amplifiers

Demonstration of an enhancement/depletion mode InGaP/AIGaAs PHEMT for various wireless system power amplifiers operating from 2 to 7 V

April 1, 2001

Y. Tkachenko, Y. Zhao, C. Wei and D. Bartle

0 Comments

TECHNICAL FEATURE Enhancement/Depletion Mode InGaP/AlGaAs PHEMT for High Efficiency Power Amplifiers An enhancement/depletion mode InGaP/AlGaAs power pseudomorphic high electron mobility transistor (PHEMT) is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes the excellent etch selectivity and surface charge screening properties of InGaP material. At...