Articles by Microwave Journal Staff

Freescale Semiconductor unveiled the world’s highest power LDMOS RF power transistor. The MRF6VP11KH device delivers pulsed RF output power of 1 kW at 130 MHz and features the highest drain efficiency and power gain of any device in its class. This ultra-efficient transistor is the latest example of Freescale’s...

RF Micro Devices Inc. announced the introduction of the RF393X family of 48 V gallium nitride (GaN) power transistors. The RF393X product family offers power performance from 10 to 120 W and very wide tunable bandwidth, demonstrating the superior combination of high power and bandwidth offered by RFMD’s GaN...

Sirenza Microdevices announced the production release of the SPF-5043Z and SPF-5122Z high performance enhancement mode PHEMT MMIC low noise amplifiers (LNA). These LNAs offer sub-1 dB noise figure and high linearity in an easy-to-use active-biased gain block configuration. Fully integrated impedance matching circuitry eliminates the need for external matching...

Hittite Microwave Corp. has introduced a GaAs MMIC x2 active frequency multiplier that is ideal for point-to-point and point-to-multipoint radios, VSAT, telecom, test instrumentation, military, space and fiber optics applications from 8 to 21 GHz. The HMC561 is a broadband x2 active frequency multiplier die that utilizes GaAs PHEMT...

Infineon Technologies announced a new family of transient voltage suppressor (TVS) diode arrays intended specifically to protect controller area network (CAN) automotive control networks and industrial bus systems from voltage spikes as high as 30 kV. The new dual-channel bi-directional and uni-directional ESD24V diode arrays are available in the...

Tyco Electronics announced the expansion of the M/A-COM RFID reader module line to include new in-phase/quadrature (I/Q), source and transmit modules. The new M/A-COM RFID reader modules are ideal for a variety of applications, specifically those that require high performance, flexible and compact features. Receive I/Q Modules The MAIA-007860-000100,...

Mimix Broadband Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) wideband buffer amplifier with on-chip drain bias coil and DC blocking. Using 0.30 micron gate length GaAs pseudomorphic high electron mobility transistor (PHEMT) device model technology, the buffer amplifier covers the 2 to 18 GHz frequency...

Thales MESL has launched a range of waveguide couplers from 7 to 23 GHz for the point to point radio market. Coupling values of 3, 6 and 10 dB are available. The couplers also include a polarization flange. Thales MESL can support fast prototyping using machined parts before moving...

RF Micro Devices Inc. announced it has commenced shipments of its gallium nitride (GaN) RF3822 PowerIC broadband power amplifier (PA) to a top-tier military supplier. RFMD's RF3822 PowerIC delivers power performance over a frequency range of 0.1 GHz to 1 GHz and is ideally suited for multiple-band and broadband...

Anritsu Co. introduced 2 MHz and 6 GHz cable and antenna frequency extensions to its S331D/S332D Site Master™ cable and antenna analyzers. The Site Master 6 GHz extension allows users to accurately measure signals in the 4.9 GHz public safety and 5.8 GHz ISM bands, while the 2 MHz...