R. Lai, H. Wang, Y.C. Chen, T. Block, P.H. Liu, D.C. Streit. D. Tran. M. Barsky, W. Jones, P. Siegel and T. Gaier

Articles by R. Lai, H. Wang, Y.C. Chen, T. Block, P.H. Liu, D.C. Streit. D. Tran. M. Barsky, W. Jones, P. Siegel and T. Gaier

155 GHz MMIC LNA's with 12dB Gain Fabricated Using a High Yield InP HEMT MMIC Process

A D-band InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) MMIC low noise amplifier (LNA) developed using a high performance 0.1 µm passivated InP HEMT MMIC process

September 1, 1997

R. Lai, H. Wang, Y.C. Chen, T. Block, P.H. Liu, D.C. Streit. D. Tran. M. Barsky, W. Jones, P. Siegel and T. Gaier

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155 GHz MMIC LNAs with 12 dB Gain Fabricated Using a High Yield InP HEMT MMIC Process A highly robust, high performance 0.1 mm passivated InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) MMIC process with frequency capability to 200 GHz and beyond has been developed. This process has demonstrated...