ARTICLES

RFMD commences LTE shipments to Samsung

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.


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RFMD introduces WiFi front end modules at IMS 2012

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD’s FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world’s leading WiFi chipset providers.


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RFMD expands GaN matched power transistor family

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.


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