Articles by Freescale Semiconductor, Tempe, Ariz.

Freescale Semiconductor has introduced its next generation of laterally diffused metal oxide semiconductor (LDMOS) RF power transistors to meet growing demand for reduced power consumption in cellular transmitters. Building on its legacy of RF power transistor leadership, Freescale’s eighth generation high voltage (HV8) RF Power LDMOS technology is engineered...

The recent launch of Freescale RF high power, high voltage LDMOS devices has made possible the design of kilowatt class power amplifiers in a compact format. A 1 kW power amplifier operating in pulse mode at 27.5 MHz intended for ISM applications has been designed. It is targeted for...

Freescale Semiconductor has reinforced its commitment to the commercial aerospace market with the introduction of a high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor. The latest addition to Freescale’s RF aerospace portfolio, the MRF6V4300N device is optimized for HF to UHF communications. The MRF6V4300N power transistor is...

The intense pressure on wireless service providers to reduce cost at every level while maintaining or even increasing performance has produced some notable achievements. One of the most impressive is in LDMOS RF power transistors, which today deliver higher RF power, gain and efficiency than their predecessors. Although perhaps...