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100 W GaN HEMT Modeling

Recent improvements in GaN HEMT device technology have enabled unprecedented power levels for solid-state amplification. Devices are now capable of exceeding 100 W in a single package.<sup>1</sup> The need for accurate models for these devices has beco...
GaN devices now operate at much higher bias conditions than traditional PHEMTs or HBTs, and also dissipate DC power and generate RF power at much higher densities. Due to high RF and DC power levels, it was found that conventional CW device characterization and modeling techniques are no longer...
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