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Taking note of Dr. Ulrich L. Rohde's outstanding contributions to engineering and also his dynamic leadership in the engineering domain that have immensely contributed for the faster development of India, the Indian National Academy of Engineering (INAE) Council has decided to elect Dr. Rohde as a Fellow of the INAE at its recent meeting under the special provision of Rule 37(g).
Analog Devices, Inc. (ADI) and the Analog Devices Foundation officially opened with a ribbon-cutting ceremony an Analog Devices RF/Microwave Learning Lab at UMass Lowell.
Sumitomo Electric Industries, Ltd. has developed a GaN transistor that uses N-polar GaN and, for the gate insulating layer, the first hafnium (Hf)-based, highly heat-resistant, high dielectric material, setting its sights on the post-5G era.
U.S. Senator Patrick Leahy and GlobalFoundries (GF) announced the award of $30 million in federal funding to advance the development and production of next-generation GaN on Si semiconductors at GF’s facility in Essex Junction, Vt.
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