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Intelliconnect (Europe) Ltd. has extended its popular range of 2.9 mm and SMA connectors with the addition of a solderless version which offers customers faster assembly time and field replaceable connectivity.

Rohde & Schwarz Benelux has been awarded €1.8 million by the Netherlands’ Defence Material Organization (DMO) for the TESt Lane Analysis Mobile (TESLA-M) project.

In light of the global pandemic, growing numbers of cases in Europe, and related measures imposed by the respective authorities, European Microwave Week (EuMW) organizers have decided to make EuMW 2020 a virtual event this year while simultaneously planning for the next in-person event in London in October of 2021.

u-blox has announced the u-blox M10, its latest highly integrated global navigation satellite system (GNSS) platform designed fully in-house for ultra-low power high performance positioning applications.

Following the deployment of higher frequencies in sub-6 GHz 5G bands, GaN demonstrated properties that exceed the existing Silicon based LMDOS technology in terms of higher bandwidth and higher power density requirements. With the emerging market opportunities, the following questions are being raised in the industry: What is the business outlook for the GaN RF market with the arrival of 5G? Which technology, GaN-on-Silicon Carbide (SiC) or GaN-on-Silicon, will more successfully grow its market? Which business models will dominate in the market? How will the GaN RF business evolve in view of the US-China tension, which is becoming more sensitive than ever?

BT and EE customers are set to benefit from Ericsson 5G Radio Access Network (RAN) connectivity following the company’s selection as BT’s 5G RAN provider in the U.K. capitals London, Edinburgh, Belfast and Cardiff and other major cities.

Yole Développement is expecting the radar market to grow to US$250 million by 2025, with +56 percent CAGR between 2019 and 2025.

IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.