MTT-S IMS

Laird Technologies to showcase EMI and microwave solutions at IMS 2013

When the IEEE International Microwave Symposium opens early next month, Laird Technologies Inc., a global technology company, will be there to showcase its best-in-class EMI and microwave materials to design engineers looking for solutions with proven results. Addressing EMI issues early in the design process is critical, and Laird’s customizable solutions are ideal for engineers working at VHF, UHF, microwave and millimeter wave frequencies in industries ranging from wireless and telecommunications to medical and military. 


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Nujira beats own world record for ET PA linearity

Nujira Ltd., the world’s leader in Envelope Tracking (ET) technology, will be presenting new performance results at the IEEE MTT International Microwave Symposium (IMS) this week demonstrating that the company has bettered its own world record linearity mark for an RF Power Amplifier (PA) operating under ET conditions.


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API Technologies to showcase extensive line of microwave products at IMS 2013

API Technologies Corp., a trusted provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, announced that it will showcase a wide range of RF, microwave, and millimeter wave products at Booth #744 during the 2013 IEEE International Microwave Symposium (IMS2013). The IMS 2013 Exhibition takes place June 4-6 at the Washington State Convention Center in Seattle.


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TriQuint accelerates GaN offerings, releases significant new products and foundry services

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.


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NEL introduces ultra low phase noise OCXO @100 MHZ

NEL Frequency Controls Inc. announced the release of a new reduced height profile option for its ultra low phase noise OCXO at 100 MHz. The O-CIH-X Series is now available with 0.4’’ (10.2 mm) height profile in addition to the 0.5” (12.7 mm) original model. This OCXO offers superior close-in phase noise of -105 dBc/Hz and -185 dBc/Hz phase noise on the floor.


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NXP delivers industry's first ultra-wideband Doherty amplifiers

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.


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Rogers shows advanced circuit material solutions and offers design guidance at IMS 2013

Rogers Corp. will highlight several of its high quality printed circuit board (PCB) materialsat the upcoming 2013 IEEE International Microwave Symposium (IMS).  Rogers’ Advanced Circuit Materials representatives will be on hand at exhibition booth #1459. In addition, John Coonrod, Rogers Market Development Engineer, will be presenting “Determining Circuit Material Dielectric Constant from Phase Measurements.” as part of the technical program.


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