Semiconductors / Integrated Circuits

Catalog Update

Capabilities Brochure Learn about all capabilities of Aeroflex IQCreator™ software in this new product brochure. Designed for use with Aeroflex’s digital RF signal generators, including the 3410 and PXI-based 3000 Series, IQCreator enables you to create waveforms that emulate digitally modulated RF and analog baseband I and Q transmission...
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New Products

High Power GaN Amplifier The model SSPA 3.1-3.5-1300-RM is a high power, pulsed RF amplifier that operates from 3.1 to 3.5 GHz in a rack-mounted configuration. This PA is ideal for S-band military radars. It is packaged in a 3U high, 19 inch rack-mounted enclosure. This amplifier has a...
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Microwave Metrics

Mandates Reshape Market for Automotive Electronic Stability Control Systems Driven by new government mandates, global market revenue for Microelectromechanical System (MEMS) sensors used for automotive Electronic Stability Control (ESC) is set to nearly double from 2006 to 2012, according to iSuppli Corp. Worldwide revenue for MEMS ESC sensors will...
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Panasonic and Renesas Technology Collaborate to Develop SoCs

Panasonic Corp. and Renesas Technology Corp. have announced their collaboration to develop elemental process technologies for System-on-Chips (SoC) of the next-generation 32 nm node. The two companies are confident that their 32 nm node transistor technology and other advances can soon be applied to products in mass production. It...
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Agilent, Aeroflex Microelectronic Solutions Partner

Agilent Technologies Inc. and Aeroflex Microelectronic Solutions announced a strategic alliance to deliver industry-leading RF and microwave components and Multi-Chip Module solutions for aerospace, satellite and military applications using Agilent’s monolithic microwave integrated circuits (MMIC). “Agilent is fully committed to helping today’s engineers create the best products for the...
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Nitronex Expands 5 W Transistor Performance Data

Nitronex , a leader in gallium nitride on silicon (GaN-on-Si) RF power transistors for the wireless infrastructure, broadband and military markets, has expanded the performance data of its 28 V, 5 W class high electron mobility transistor (HEMT) to include frequencies between 5.1 to 5.2 GHz and 5.7 to...
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