Infineon this week announced the release of the PTFA091201GL V1 and the PTFA091201HL V1, 120 W LDMOS FETs designed for cellular power amplifier applications in the 920 to 960 MHz frequency band. The products feature broadband internal matching, an innovative open cavity plastic package with copper base and outstanding thermal performance.
In addition, the company introduced the PTFA181001GL V1 and the PTFA181001HL V1, 100 W LDMOS FETs designed for cellular power amplifier applications in the 1805 to 1880 MHz frequency band. These products also feature broadband internal matching, an innovative open cavity plastic package with copper base and outstanding thermal performance. Manufactured with Infineon’s advance LDMOS process, these devices offer superior reliability and consistency.