Teledyne HiRel Semiconductors introduced its latest product, the GaN high-power RF switch, model
TDSW84230EP. This switch is designed to replace positive-intrinsic-negative (PIN) diode-based RF switches commonly used in the RF front-ends of modern tactical and military communication radio systems. Utilizing a wide bandgap GaN high electron mobility transistor (HEMT) process, the TDSW84230EP offers excellent breakdown voltage and saturation current capabilities. It is housed in a 16-pin quad-flat no-lead (QFN) 3 x 3 x 0.8 mm plastic surface-mount package and is qualified for operation within a military temperature range of -55°C to 125°C.
The TDSW84230EP is a single pole double throw GaN reflective switch that employs MMIC design techniques. It supports a 20 W continuous wave power handling capability and operates across a frequency range from 30 MHz to 5 GHz. With an insertion loss of 0.2 dB and port isolation of 45 dB, this switch offers efficiency and board area savings compared to traditional PIN diode architectures.
Optimized for aerospace and defense applications, the TDSW84230EP is designed to meet the demands of wideband continuous operation in defense software-defined radio architectures. This high-power GaN switch provides a solution for replacing traditional PIN diode switches, offering tolerance for up to 900 mA/mm saturation currents and voltage RF power handling capabilities. The inherent high breakdown voltage and carrier density of GaN technology enable higher operating power capabilities while increasing linearity to support better harmonic and spurious signal requirements.
The TDSW84230EP devices are now available for order and shipment in commercial versions from Teledyne HiRel Semiconductors or authorized distributors. They are shipped from Teledyne’s Department of Defense Trusted Facility in Milpitas, Calif.
Teledyne Aerospace & Defense Electronics | Teledyne HiRel Semiconductors
Milpitas, Calif.
www.teledyne-ade/HiRel-Semiconductors
