Figure 1 A comparison of N-channel and P-channel construction.
International Rectifier (IR) HiRel and its parent company, Infineon Technologies, have over 50 years of combined experience designing and manufacturing best-in-class semiconductors for commercial and high-reliability applications. IR HiRel’s portfolio of radiation-tolerant power MOSFETs is ideal for low Earth orbit (LEO) missions, typically lasting two to five years. These products are a testament to the company’s expertise in the automotive and space industries. Qualified for space applications under the automotive AEC-Q101 standard, IR HiRel offers N- and P-channel devices with a linear energy transfer of 46 MeV∙cm2/mg, total ionizing dose (TID) rating of 30 krad (Si) and single event effect (SEE) tolerance. The radiation-tolerant New Space portfolio can be used in LEO space applications and constellations, such as proton tests, without further radiation tests, helping customers go to market faster and more cost-effectively.
OVERVIEW
IR HiRel’s rad-tolerant power portfolio comprises both N-channel and P-channel devices. While P-channel MOSFETs require a negative voltage from gate to source (VGS) to activate, N-channel devices need a positive VGS to activate, as illustrated by Figure 1.
Figure 2 (a) Surface mount TO-263 D2PAK (b) Through-hole TO-247 MOSFET packages
IR HiRel’s rad-tolerant MOSFETs enable engineers to select power solutions that suit various needs without compromising size, weight and cost constraints. IR HiRel’s New Space power portfolio includes four N-channel MOSFETs and one newly-released P-channel variant, all identified in Table 1. All five IR HiRel devices are available in plastic packaging with further testing, such as outgas and salt atmosphere tests, guaranteed by the product’s qualification.
AWARD-WINNING RAD-TOLERANT N-CHANNEL MOSFETS
IR HiRel offers four different radiation-tolerant N-channel MOSFETs based on Infineon’s industry-leading and patented CoolMOS™ superjunction technology, known for its high efficiency, compact design and enhanced thermal management characteristics. Ideal for fast switching applications, the N-channel MOSFETs are offered in 60 V and 150 V voltage options in two plastic package options: the surface-mount TO-263 and the through-hole TO-247, illustrated in Figure 2. The N-channel MOSFETs support 28 V and 54 V bus voltages, which are most common in LEO satellites. Their RDS(on) values start at 15 mΩ and range to 60 mΩ, as shown in Table 1.
The surface-mount TO-263 package enables easy assembly and reflow soldering, while the through-hole TO-247 package promotes an optimized cooling concept well-suited for higher current applications. Both packages have matte tin-plated leads to reduce whisker growth. With an operating temperature of -40°C to +125°C, these field-effect transistors (FETs) bring reliability and endurance to LEO missions and constellations. The N-channel devices are ideal for all power-related applications, specifically within power conditioning units, power distribution units and DC-DC converters. Figure 3 shows a block diagram of the MOSFET applications.
Figure 3 IR HiRel’s radiation-tolerant MOSFET applications.
RAD-TOLERANT P-CHANNEL MOSFET
IR HiRel’s newly-released P-channel device brings radiation tolerance and reliability to the New Space market. It is offered in a -60 V voltage class with an RDS(on) of 38 mΩ. Available in the surface-mount TO-252-3 plastic package, the P-channel MOSFET is ideal for short-term missions aboard medium to large satellite constellations. The P-channel MOSFET is specified with a junction temperature of -55°C to +175°C and target applications include protection switches, load switches, power distribution units and battery maRDnagement systems. The P-channel device addresses the same applications shown in Figure 3. It was added as an extension to IR HiRel’s radiation-tolerant power portfolio earlier this year, complementing the 60 V and 150 V N-channel devices. Infineon is working toward expanding its radiation-tolerant portfolio with gate drivers and GaN HEMTs.
ROBUST NEWSPACE MEMORIES
To complete its New Space portfolio, Infineon IR HiRel offers volatile and non-volatile radiation-tolerant memories with a single lot code, 100 percent electrical testing and guaranteed TID radiation performance. The portfolio includes two F-RAM devices, two NOR flash devices and four pseudo-SRAM devices available in various densities, interfaces, packages and ratings. These memories are ideal in systems that do not require traditional military/aerospace certifications but benefit from robust performance and reliability in harsh environments. Like IR HiRel’s MOSFETs, the rad-tolerant memories are ideal for LEO applications with mission lifetimes under five years.
CONCLUSION
Infineon IR HiRel’s entire New Space radiation-tolerant power product line eliminates component-level testing by the customer due to its SEE and TID performance at the product level. This enables cost and time efficiency in the manufacturing process. IR HiRel’s unique experience with automotive and industrial electronics brings unmatched reliability and robust performance to today’s space exploration efforts. With high volume and established commercial assembly lines, IR HiRel’s N- and P-channel MOSFET manufacturing processes and timelines easily support the growing number of commercial launches fueling the New Space economy.
Infineon IR HiRel
Leominster, Mass.
infineon.com/cms/en/product/high-reliability
