Compared with other reported results, this design generally exhibits a wider bandwidth corresponding with high output power (see Table I). The topology of a Class-J PA is simpler than that of Class-F or Class-AB. The Class-J PA designed here is less affected by losses in integration.

TABLE I COMPARISON WITH OTHER STATE-OF-THE-ART PAs

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CONCLUSION

A wideband 5 to 7 GHz Class-J GaAs HBT PA is designed for high efficiency. To obtain wide bandwidth, the OMN is based on a low Q impedance transformation. The PA with a 1.44 mm2 chip area exhibits a measured small-signal gain of 30 dB average with 0.5 dB variation from 5 to 7 GHz. In addition, the design techniques deliver more than 29.5 dBm Psat associated with 36 percent of PAE. These results demonstrate that the Class-J mode PA achieves high efficiency over a wide bandwidth with excellent linearity.

ACKNOWLEDGMENTS

This work was funded in part by the Key-Area Research and Development Program of Guangdong Province (Grant No. 2018B010115001), in part by the National Natural Science Foundation of China under Grant 61974035 and in part by the Guangdong Local Innovative Research Team of the Pearl River Talent Program under Grant 2017BT01X168.

References

  1. S. May, D. Maassen, F. Rautschke and G. Boeck, “Two Stage 4–8 GHz, 5 W GaN-HEMT Amplifier,” European Microwave Conference, October 2017.
  2. S. Li, H. Lv, Y. Zhang, Y. Zhang, Y. Zhang and M. Asif, “A Broadband High Efficiency Monolithic Power Amplifier with GaAs HBT,” IEICE Electronics Express, Vol. 15, No. 10, 2018.
  3. K. Kim, M. Seo, J. Jeon, M. Kim, H. Kim, H. Lim, C. Park and Y. Yang, “Design of a Broadband Power Amplifier Using an Optimized Feedback Network,” Microwave and Optical Technology Letters, Vol. 53, No. 12, September 2011, pp. 2846-2851.
  4. X. Ding, S. He, F. You, S. Xie and Z. Hu, “2-4 GHz Wideband Power Amplifier with Ultra-Flat Gain and High PAE,” Electronics Letters, Vol. 49, No.5, February 2013, pp. 326-327.
  5. L. Peng, J. Chen, Z. Zhang, Y. Huang, T. Wang and G. Zhang, “Design of Broadband High-Gain GaN MMIC Power Amplifier Based on Reactive/Resistive Matching and Feedback Technique,” IEICE Electronics Express, Vol. 18, No. 19, 2021.
  6. W. L. Menninger, R. T. Benton, M. S. Choi, J. R. Feicht, U. R. Hallsten, H. C. Limburg, W. L. McGeary and X. Zhai, “70% Efficient Ku-Band and C-Band TWTs for Satellite Downlinks,” IEEE Transactions on Electron Devices, Vol. 52, No. 5, May 2005, pp. 673-678.
  7. G. C. Tripathi and M. Rawat, “RFin–RFout Linearizer System Design for Satellite Communication,” IEEE Transactions on Electron Devices, Vol. 65, No. 6, June 2018, pp. 2378-2384.
  8. K. Mimis, K. A. Morris, S. Bensmida and J. P. McGeehan, “Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation,” IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 8, August 2012, pp. 2562-2570.
  9. Y. Park; D. Minn, S. Kim, J. Moon and B. Kim, “A Highly Efficient Power Amplifier at 5.8 GHz Using Independent Harmonic Control,” IEEE Microwave and Wireless Components Letters, Vol. 27, No. 1, January 2017, pp.76-78.
  10. Q. Cai, W. Che; K. Ma and L. Gu, “A Simple Method of Designing High-Efficiency Second-Harmonic-Tuned Power Amplifier,” IEEE Microwave and Wireless Components Letters, Vol. 27, No. 12, December 2017, pp. 1149-1151.
  11. Q. Cai, W. Che and Q. Xue, “High-Efficiency Power Amplifier with a Multiharmonic Tuning Network,” IEEE Microwave and Wireless Components Letters, Vol. 31, No. 4, April 2021, pp. 389-392.
  12. G. Lv, W. Chen, X. Liu and Z. Feng, “A Dual-Band GaN MMIC Power Amplifier with Hybrid Operating Modes for 5G Application,” IEEE Microwave and Wireless Components Letters, Vol. 29, No. 3, March 2019, pp. 228-230.
  13. R. -J. Liu, X. -Wei Zhu, J. Xia, D. Xia, L. Zhang and C. Yu, “Design Methodology Using Single Resonate Block for Harmonic Impedance Matching in GaN MMIC Doherty Amplifier,” IEEE Microwave and Wireless Components Letters, Vol. 31, No. 4, April 2021, pp. 397-400.
  14. P. Colantonio, F. Giannini, E. Limiti and V. Teppati “An Approach to Harmonic Load- and Source-Pull Measurements for High-Efficiency PA Design,” IEEE Transactions on Microwave Theory and Techniques, Vol. 52, no. 1, January 2004, pp. 191-198.
  15. H. Xie, Y. J. Cheng, Y. R. Ding, L. Wang and Y. fan, “A C-Band High-Efficiency Power Amplifier MMIC With Second-Harmonic Control in 0.25 μm GaN HEMT Technology,” IEEE Microwave and Wireless Components Letters, Vol. 31, No. 12, December 2021, pp. 1303-1306.
  16. S. C. Cripps, RF Power Amplifiers for Wireless Communications, 2nd Edition, Artech House, Boston, MA, 2006.
  17. P. Wright, J. Lees, J. Benedikt, P. J. Tasker and S. C. Cripps, “A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA,” IEEE Transactions on Microwave Theory and Techniques, Vol. 57, No. 12, December 2009, pp. 3196-3204.
  18. D. R. Parveg, P. Singerl, A. Wiesbauer, H. M. Nemati and C. Fager, “A Broadband, Efficient, Overdriven Class-J RF Power Amplifier for Burst Mode Operation,” European Microwave Conference, September 2010.
  19. J. H. Kim, G. D. Jo, J. H. Oh, Y. H. Kim, K. C. Lee and J. H. Jung, “Modeling and Design Methodology of High-Efficiency Class-F and Class-F-1 Power Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 1, January 2011, pp. 153-165.
  20. D. Kang, D. Yu, K. Min, K. Han, J. Choi, D. Kim, B. Jin, M. Jun and B. Kim, “A Highly Efficient and Linear Class-AB/F Power Amplifier for Multimode Operation,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 1, January 2008, pp. 77-87.
  21. K. Chen and D. Peroulis, “Design of Broadband Highly Efficient Harmonic-Tuned Power Amplifier Using In-Band Continuous Class-F-1 Mode Transferring,” IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 12, December 2012, pp. 4107-4116.
  22. W. Y. Refai and W. A. Davis, “A Highly Efficient Linear Multimode Multiband Class-J Power Amplifier Utilizing GaAs HBT for Handset Modules,” IEEE Transactions on Microwave Theory and Techniques, Vol. 68, No. 8, August 2020, pp. 3519-3531.
  23. T. Sharma, D. G. Holmes, R. Darraji, E. R. Srinidhi, J. Staudinger, J. K. Jones and F. M. Ghannouchi, “On the Second-Harmonic Null in Design Space of Power Amplifiers,” IEEE Microwave and Wireless Components Letters, Vol. 28, No. 7, July 2018, pp. 600-602.
  24. J. H. Kim and C. S. Par, “High Efficiency HBT Power Amplifier Utilizing Optimum Phase of Second Harmonic Source Impedance,” IEEE Microwave and Wireless Components Letters, Vol. 25, No. 11, November 2015, pp. 721-723.
  25. M. Seo, H. Lee, J. Gu, K. Hyungchul, J. Ham, W. Choi, Y. Yun, K. K. O. and Y. Yang, “High-Efficiency Power Amplifier Using an Active Second-Harmonic Injection Technique Under Optimized Third-Harmonic Termination,” IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 61, No. 8, August 2014.
  26. C. Li, F. You, S. He, X. Tang, W. Shi and J. Wang, “High-Efficiency Power Amplifier Employing Minimum-Power Harmonic Active Load Modulator,” IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 66, No. 8, August 2019, pp. 1371-1375.
  27. W. Y. Refai, A Linear RF Power Amplifier with High Efficiency for Wireless Handsets, Ph.D. Dissertation, Department of Electrical & Computer Engineering, Virginia Polytechnic Institute and State University, 2014.
  28. S. Boutayeb, A. Giry, A. Serhan, J. -D. Arnould and E. Lauga-Larroze, “Output Matching Network Design for Broadband Class B/J Power Amplifier,” Conference on Ph.D. Research in Microelectronics and Electronics, June 2017.
  29. A. Alizadeh, S. Hassanzadehyamchi, A. Medi and S. Kiaei, “An X-Band Class-J Power Amplifier with Active Load Modulation to Boost Drain Efficiency,” IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 67, No. 10, October 2020, pp. 3364-3377.
  30. J. -K Nai, Y. -H. Hsiao, Y. -S. Wang, Y. -H. Lin and H. Wang, “A 2.8–6 GHz High-Efficiency CMOS Power Amplifier with High-Order Harmonic Matching Network,” IEEE MTT-S International Microwave Symposium, May 2016.