RFMW announced design and sales support for a versatile, SiGe driver amplifier from NXP. The BTS6201U amplifier delivers high linearity with 27 dBm typical P1dB output power in its frequency range of 2300 to 4200 MHz. A dual-stage, single-ended design provides 31 dB of gain and is matched to 50 Ohms with integrated bias control, supporting fast switching for TDD systems. Class AB drain efficiency is 20 percent and signal bandwidth is 200 MHz from this 5 V device. Typical applications are high linearity pre-drivers in cellular infrastructures, such as bands B40, n41, B42, n77, n78 and C-band. Offered in a 3 x 3 mm QFN over-molded plastic package.