Kuhne electronic has introduced a 10 W S-Band power amplifier (PA) module based on an innovative GaN HEMT circuit design. At 10 W output, the KUPA200270-10A/B module achieves efficiency greater than 40 percent over its entire 2.0 to 2.7 GHz bandwidth, with noise figure of less than 1.5 dB, gain of 47 dB and typical ripple of ±0.75 dB across the full band.
The high efficiency combined with an extended operating temperature range from –30°C to +80°C enables the PA to be used even with suboptimal cooling. The KUPA200270-10A/B includes low impedance monitoring outputs for measuring and monitoring forward and reverse power, as well as operating temperature. An over-temperature shutdown at +80°C with automatic restart protects the module from overheating. Designed to be rugged and “user friendly,” the PA will tolerate arbitrary mismatch at the output port without instability or damage, and it can withstand input power levels to 1 W.
The A version is biased with a fixed 28 V DC supply; a B version is available with a wider supply voltage range, from 10 to 50 V DC, making the PA module compatible with nearly any DC supply available. The DC supply, control and monitoring signals are connected with an I/O interface protected against reverse polarity, overvoltage, ESD and EMI.
With its high bandwidth, ruggedness and unique features, the KUPA200270-10A/B supports a variety of applications: communications, jammers, radar, plasma generation, microwave heating, medical and scientific applications and measurement setups including EMC testing. It is available for immediate shipment. Additional GaN PA modules with the same features covering other frequency ranges are planned to be released later this year.
Kuhne electronic GmbH
Berg, Germany
www.kuhne-electronic.com/funk/en/