Integra Technologies is excited to be launching their new brand identity and several new devices at this year’s International Microwave Symposium (IMS) in Philadelphia, Pa. They will be at Booth #815.
In addition to announcing their new brand identity created by industry experts, Strand Marketing, Integra will be reviewing an exciting array of new 50 Ohm (fully matched) RF Power Transistors and integrated RF Power Modules (aka “Pallets”) for pulsed radar applications. IGNP0912L1KW is a 50 Ohm GaN/SiC, RF Power Module for L-Band avionics systems operating over the instantaneous bandwidth of 0.960 to 1.215 GHz. This integrated amplifier module supplies a minimum of 1000 W of peak pulse power, under the conditions of 2.5 ms pulse width and 20 percent duty cycle, while offering excellent thermal stability. IGT5259L50 is a 50 Ohm GaN/SiC transistor, offering 50 W at 5 to 6 GHz for pulsed C-Band radar applications. IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500 W at 1.2 to 1.4 GHz and offers 50 V drain bias, 15.5 dB gain and 65 percent efficiency. This transistor is designed for long-pulse L-Band radar applications.
Along with these products, Integra will be discussing upcoming products to be released, including RF Power Modules up to 2000 W, X-Band transistors and a line of devices with advanced thermal control. “We’re thrilled to mark IMS2018 as Integra’s break out moment in providing the industry’s most advanced standard and semi-custom RF Power Devices,” says Integra’s CEO Suja Ramnath. “Our R&D team has been working diligently to push the boundaries of power and efficiency and we invite all radar system designers to partner up with us and ‘Find Your Power.’”
Stop by and visit Integra at Booth #815. Talk with their industry leading experts and learn which high-power RF devices are best for your radar’s high amplifier chain.