Qorvo® introduced the world’s highest power GaN-on-SiC RF transistor. Operating with 1.8 kW at 65 V, the QPD1025 delivers the outstanding signal integrity and extended reach essential for L-Band avionics and Identification Friend or Foe (IFF) applications.

Engineering samples of the QPD1025 are available now.

QPD1025 1800 W, 65 V GaN RF Input-Matched Transistor
Frequency Range: 1.0 to 1.1 GHz
Linear Gain: 22.5 dB (at 1.0 GHz Load Pull)
Typical Power-Added Efficiency at 3 dB Compression: 77.2 percent (at 1.0 GHz Load Pull)
CW and Pulse Capable
Package: 4-Lead NI-1230 (Earless)

“This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.” — Roger Hall, general manager of Qorvo's High Power Solutions


“Qorvo’s QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective.” — Asif Anwar, executive director of Strategy Analytics’ Strategic Technologies Practice

Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000.