Internally matched, featuring 20 dB typical gain, 62% efficiency at pulse width of 128 μs and 10% duty
Richardson RFPD Inc. announced the availability and full design support capabilities for a new GaN on SiC 960 to 1215 MHz pulsed power HEMT from M/A-COM Technology Solutions.
The MAGX-000912-650L0x is a gold-metalized, matched gallium nitride on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications in the
960 MHz to 1215 MHz range, such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state-of-the-art wafer fabrication processes, this high performance transistor provides high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions.
According to MACOM, additional key features of the MAGX-000912-650L0x include:
- GaN on SiC depletion-mode transistor technology
- Internally matched
- Common-source configuration
- Broadband Class AB operation
- 50V operation
- 800W performance at 20μs and 6% duty factor
- MTTF = 600 years (TJ < 200°C)
To find more information, or to purchase this product today online, please visit the MAGX-000912-650L00 (standard flange) and MAGX-000912-650L0S (earless flange) webpages. The devices are also available by calling 1-800-737-6937.