MACOM_MAGX-000912_PR_PhotoInternally matched, featuring 20 dB typical gain, 62% efficiency at pulse width of 128 μs and 10% duty

Richardson RFPD Inc. announced the availability and full design support capabilities for a new GaN on SiC 960 to 1215 MHz pulsed power HEMT from M/A-COM Technology Solutions.

The MAGX-000912-650L0x is a gold-metalized, matched gallium nitride on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications in the

960 MHz to 1215 MHz range, such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state-of-the-art wafer fabrication processes, this high performance transistor provides high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions.

The new HEMT is available in a standard flange package (MAGX-000912-650L00) and an earless flange package (MAGX-000912-650L0S).

According to MACOM, additional key features of the MAGX-000912-650L0x include:

  • GaN on SiC depletion-mode transistor technology
  • Internally matched
  • Common-source configuration
  • Broadband Class AB operation
  • 50V operation
  • 800W performance at 20μs and 6% duty factor
  • MTTF = 600 years (TJ < 200°C)

To find more information, or to purchase this product today online, please visit the MAGX-000912-650L00 (standard flange) and MAGX-000912-650L0S (earless flange) webpages. The devices are also available by calling 1-800-737-6937.