Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced a new gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process technology that provides higher gain/bandwidth and lower power consumption than competing semiconductor processes. Qorvo's new TQPHT09 is a 90 nm pHEMT process that supports Qorvo's next-generation optical product portfolio. Coupled with Qorvo's industry-leading reliability, this new process is ideal for next-generation high frequency, high performance amplifiers required for 100G+ linear applications.
Manufactured in Qorvo's industry leading GaAs fabrication facility in Richardson, Texas, TQPHT09 is the newest offering in the company's well-established pHEMT process portfolio. Qorvo's TQPHT09 serves as the basis for several new optical modulator driver products including the TGA4960-SL, the Company's most advanced quad-channel 100G modulator driver. The TGA4960-SL is available in the CFP2 form factor for Metro and long haul applications, and is also well suited for upgrading the 100G linear dual-channel drivers for line card applications. It is optimized for high performance, low power dissipation and high channel-to-channel isolation, and is packaged in a 14.0 x 8.0 x 2.6 mm SMT module, the smallest footprint in the industry.
Qorvo is showcasing its expanding portfolio of flexible and agile solutions for optical applications at the Optical Fiber Communication Conference and Exposition in Los Angeles, California, March 24-26 at Booth 1433. To learn more about TQPHT90 process advantages, TGA4960-SL and other high-performance driver modules and TIAs for 100G+ applications, visit www.qorvo.com/optical.