GREENSBORO, N.C., Jun 15, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the availability of the RF3858 front end module (FEM). The RF3858 FEM supports multiple Tx/Rx applications in the 900 MHz ISM band, including Smart Energy/Advanced Metering Infrastructure (AMI).

The highly integrated, single-chip RF3858 addresses the increasing requirements for aggressive size reductions in the RF front end designs for portable equipment. The RF3858 combines a 1-watt 915 MHz power amplifier capable of 31.5 dBm of output power, with a double-pole double-throw (DPDT) Tx/Rx transfer switch with low insertion loss and high isolation, a low noise amplifier (LNA) with bypass mode, and a Tx harmonic filter.

The RF3858 reduces the number of external components by approximately 80% versus discrete designs, greatly minimizing product footprint, accelerating design-in time and reducing overall assembly costs. The RF3858 is packaged in a small 8.0 mm x 8.0 mm x 1.2 mm over-molded laminate package with backside ground, minimizing next level board space and allowing for simplified integration.

Pricing and Availability
The RF3858 is priced at $2.28 in quantities of 10,000 and is available immediately.

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