Ideal for Microwave Radio, Military & Space, VSAT & Test Applications from 16 to 24 GHz
Chelmsford, MA 08/25/2009 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new GaAs pHEMT, 1/2 Watt and 1 Watt Power Amplifiers which are ideal for high linearity transmit chains in Point-to-Point/Point-to-Multi-Point microwave radio, military & space, VSAT, and test applications from 16 to 24 GHz.
The HMC756 and the HMC757 are GaAs pHEMT, ½ Watt and 1 Watt Power Amplifier dies which are rated from 16 to 24 GHz, and provide up to 23 dB of small signal gain across the band. These three stage, balanced Power Amplifiers are also capable of providing +33 dBm of saturated output power at 28% PAE and +30 dBm of saturated output power at 30% PAE respectively, from a +7V supply. The HMC756 and the HMC757 Power Amplifiers also feature output IP3 of up to +41 dBm, P1dB output power up to +32 dBm, and require no external matching components. Small die size, combined with RF I/Os that are DC blocked and matched to 50 Ohms, make the HMC756 and the HMC757 dies ideal for integration into Multi-Chip-Modules (MCMs).
The HMC756 and the HMC757 die samples are available from stock and can be ordered on-line.