December 6, 2007, Houston, Texas - Mimix Broadband, Inc. introduces an active doubler in an RoHS compliant 3X3mm plastic QFN package that delivers +20 dBm output saturated power (Pout) and 35 dBc fundamental suppression. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the doubler covers the 13.5-17.0 / 27.0-34.0 GHz frequency bands and integrates a gain stage, passive doubler and driver amplifier onto a single device. Identified as XX1007-QT, this device is well suited for VSAT, millimeter-wave Point-to-Point Radio, LMDS or SATCOM applications. The XX1007-QT includes on-chip ESD protection and an integrated bypassing capacitor, eliminating the need for any external components. The device has a self-bias configuration, requiring only a positive 5V supply.
"The high level of integration coupled with a standard 3X3mm plastic QFN package offers our customers an optimal cost effective solution, saving precious board area and component count," stated Amer Droubi, Product Manager, Mimix Broadband, Inc. "Eliminating the need for negative voltage supply and external bypassing elements simplifies our customers' PCB layout and reduces their time to market. The high output power of the XX1007-QT makes it ideal as a driver stage to the final output power amplifier in VSAT transmit systems."
Mimix performs 100% RF testing on the XX1007-QT. Production quantities are available today from stock. Technical support is also available from Mimix's applications engineers at 281.988.4600. The datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.