The Model AMF-6B-08501070-80-33P-ISO delivers over 33 dBm of power over the band 8.5 to 10.7 GHz, with over 30 dB gain and ±0.75 dB flatness. P1 dB is over 34 dBm above 10 GHz. Noise figure is less than 8 dB, port VSWR is less than 1.5:1, and it draws about 1.4A from a single +12 to +15 V DC supply.
MITEQ’s AMFG family of GaN power amplifiers covers frequency ranges more than ten octaves wide. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power.
MITEQ Inc. introduces Model AMFW-8F-17702130-150-P2-TC-WP, a very low noise, high dynamic range, temperature compensated, weatherproof Ka-band waveguide frontend operating at 17.7 to 21.3 GHz. Isolator protected at both the pressure sealed WR-42 waveguide input and K(F) connector output, the low-noise amplifier is lightweight with a small profile and footprint.
MITEQ Inc. introduces a new addition to its family of wideband high power amplifiers. The AMF-5B-07900840-35-40P is a connectorized X-band high power amplifier/module, covering 7.9 to 8.4 GHz and delivering over 10 W at P1 dB.
Mini-Circuits New Coaxial High Power Amplifier - 50Ω 3W 6 to 18 GHz. Features include high power, 3 W, high dynamic range, high gain of 35 dB typ. and good directivity of 35 dB typ. Internal voltage is regulated for 13 to 18 VDC.