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Products

Wideband Power Amplifier: RFHA1006

RFHA1006_SPRFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.


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GaAs pHEMT Digital Phase Shifters: MAPS-010145 / MAPS-010165

MK120075MACOM-X-Band-Phase-ShiftersRichardson RFPD, Inc. today announces immediate availability and full design support capabilities for the newest additions to the family of GaAs pHEMT digital phase shifters from M/A-COM Technology Solutions Inc. (M/A-COM Tech). The MAPS-010145 and MAPS-010165 are, respectively, 4 and 6-bit packaged devices that maintain low phase error and minimal attenuation variation over the full 360 degrees and 3.5-6 GHz frequency range.


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May 2012 Selection Guide

selection guide may2012 (2)Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, is pleased to announce the release of the May 2012 Selection Guide which summarizes over 1025 products including 21 new products.


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SP3T Symmetric Switch: RFSW6131

RFSW6131_SPRFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.


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High Power Front End Module: RFFM7600

RFFM7600_SPRFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.


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Transmit/Receive Front End Modules: RF65x9 Series

RFMDrf6509The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.


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HBT Amplifiers: MMZ09312B and MMZ25332B

HBTamplifiersFreescaleRichardson RFPD Inc. announces availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz. The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications.


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