Industry News

The New Power Brokers: Nitronex on GaN

Ray Campton from Nitronex talks to Microwave Journal about their GaN technology, the markets and the competition.
  MWJ:   What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices?   Nitronex: The most significant advantages of GaN over other power technologies are is its power density and high frequency response. Having several times higher power density results in...
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The New Power Brokers: Freescale Semiconductor on LDMOS

Leonard Pelletier of Freescale Semiconductor talks to Microwave Journal about their LDMOS technology, the markets and the competition.
MWJ: What are the most significant benefits of LDMOS?   Freescale: • LDMOS has the lowest cost per watt ($/W) ratio of any of the high power RF amplifier technologies. • LDMOS has some of the best Class-AB linearity, gain, reliability, and thermal resistance numbers of any of the popular RF power...
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The New Power Brokers: HVVI on HVVFETs

Brian Battaglia (formerly) of HVVi talks to Microwave Journal about their HVVFET technology, the markets and the competition.
MWJ:   What are the most significant benefits of HVVFET™? How does this compare to other high power devices? HVVi: The benefit of designing high power devices using a high voltage breakdown technology and a vertical device structure is high power density. The resulting power device is housed in...
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The New Power Brokers: NXP on LDMOS

Steve Theeuwen from NXP talks to Microwave Journal about their LDMOS technology, the markets and the competition.
MWJ: What is the potential of GaN/LDMOS/HVFET technology in mobile radio communication systems. What are the most significant benefits of GaN/LDMOS/HVFET? NXP: NXP is the company that develops both LDMOS and GaN technology. LDMOS is today’s technology of choice for base station, broadcast and radar applications. Being technology leader,...
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The New Power Brokers: High Voltage RF Devices

Among the changing landscape of RF/microwave semiconductor developments, devices with material properties that can sustain high electric breakdown are of particular interest.  Within the last six-months alone, the Journal has published over a dozen papers on Laterally Diffused MOS (LDMOS), gallium nitride (GaN), silicon carbide (SiC) SIT & MESFETs,...
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Hittite Expands Power Detector Line

Hittite Microwave Corp. , a supplier of complete MMIC-based solutions for communication and military markets, continues to expand its Power Detector product line to include an extensive range of industry-leading RMS Power Detectors, Logarithmic Detectors and SDLVAs that cover the entire 50 Hz to 20 GHz frequency range with...
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