M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products,introduced the MASW-011055, a high power PIN diode SP2T switch with industry leading linearity in common anode configuration, operating over the 0.03 to 3 GHz frequency range.
Coilcraft's new AGP4233 series shielded power inductors offer a unique combination of high current handling and high inductance, making them ideal for high-current power supply and filtering applications such as those used in electric vehicle start-stop systems.
M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance RF, microwave, millimeter wave and photonic products, today announced the release of a high power pulsed amplifier designed for civil air traffic control and weather radar applications.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.
Texas Instruments (TI) announced the industry's first flexible high frequency 13.56 MHz sensor transponder family. The highly integrated ultra-low-power RF430FRL15xHsystem-on-chip (SoC) family combines an ISO 15693-compliant Near Field Communication (NFC) interface with a programmable microcontroller (MCU), non-volatile FRAM, an analog-to-digital converter (ADC) and SPI or I2C interface.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.
RFMW, Ltd. announces design and sales support for a pair of 5 GHz power amplifiers designed for 802.11a/n/ac WLAN applications. TriQuint’s TQP5523 and TQP5525are fully integrated modules with internal matching on both input and output ports.
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.