Articles Tagged with ''high''

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.

Texas Instruments (TI) announced the industry's first flexible high frequency 13.56 MHz sensor transponder family. The highly integrated ultra-low-power RF430FRL15xHsystem-on-chip (SoC) family combines an ISO 15693-compliant Near Field Communication (NFC) interface with a programmable microcontroller (MCU), non-volatile FRAM, an analog-to-digital converter (ADC) and SPI or I2C interface.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.

 RFMW, Ltd. announces design and sales support for a pair of 5 GHz power amplifiers designed for 802.11a/n/ac WLAN applications. TriQuint’s TQP5523 and TQP5525are fully integrated modules with internal matching on both input and output ports.  

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.  

 Bonding Source, the industry’s leading supplier of epoxy pastes and films for the RF Microwave industry, introduces the latest from NAMICS for applications requiring high thermal conductivity.  

 Lake Shore Cryotronics, a leading innovator in solutions for measurement over a wide range of temperature and magnetic field conditions, announced that it will be exhibiting solutions for high-frequency material characterization at the 39th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sept. 14–19, in Tucson, Ariz. 

 Aethercomm Inc., has recently completed a high efficiency, high power and highly linear rack mounted amplifier which operates from 960 to 1215 MHz.  This rack mounted unit is microprocessor controlled and provides excellent performance across the entire band. 

 Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD217, a new 28 to 32 GHz GaN power amplifier in die form, to their growing product line. 

 Pasternack Enterprises, Inc., an industry-leading manufacturer and supplier of RF, microwave and millimeter wave products, debuts an entirely new family of high isolation PIN diode switches consisting of three low insertion loss, high isolation and high speed modules, covering a frequency range of 1 to 12 GHz.