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Aerospace and Defense Channel / Industry News

RFMW offers 5 W wideband GaN transistor

July 15, 2014
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 RFMW Ltd. announces design and sales support fora 50 ohm, input matched, GaN transistor from TriQuint. The T1G3000532-SM spans 30MHz to 3.5GHz and can be tuned for power or efficiency depending on customer application. Ideal for professional and military communications, radar systems, test instrumentation or avionics, the T1G3000532-SM is CW or pulsed capable. TriQuint offers this transistor in a 5x5 ceramic QFN, low thermal resistance package. The T1G3000532-SM is capable of 5.7W P3dB and linear gain of 15.7dB at 3GHz. This highly efficient (>64% PAE) device runs from a 32V supply. 

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