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Northrop Grumman Corp., a designer and fabricator of advanced semiconductors, has developed two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband ultra low noise amplifiers (LNA) that are in production for immediate delivery.
The cost-effective indium phosphide (InP) high electron mobility transistor (HEMT) LNAs are for use in E-Band and W-Band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios.
The compact die design of each LNA considerably reduces footprint size and exhibits unmatched ultra low noise performance and high gain.
"The LNAs are the initial release of products designed with the company's indium phosphide process, a powerful semiconductor technology that has successfully been used in Northrop Grumman's advanced military communication systems," said Frank Kropschot, general manager, Microelectronics Products and Services at Northrop Grumman. "For the first time, Northrop is offering products for similarly demanding commercial applications."
To ensure rugged and reliable operation, both LNAs are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.
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