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Cellular 4G/LTE Channel / Industry News

RFaxis 2nd gen pure CMOS single-chip/single-die RFeICs Outperform GaAs/SiGe based RF front-end

September 24, 2012
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RFaxis, a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless connectivity and cellular mobility markets, announced it will start volume production of its second-generation, pure CMOS-based RFeICs in Q4 2012. The new solutions will serve rapidly growing markets including smartphone and tablets, WLAN 11a/n/ac, ZigBee, wireless audio, smart energy and home automation.

Following the successful deployment of its RFX2401C and RFX2402C, the world's first single-chip/single-die, RF front-end ICs (RFeIC) in pure CMOS for ZigBee/ISM and 802.11b/g/n applications, RFaxis is now entering into full-scale manufacturing and shipment of seven additional RFeICs. This will significantly broaden RFaxis’ product offerings to the wireless/RF community.

The RFX5000 and RFX5000B deliver +18 dBm output power with 3% EVM for 64 QAM/OFDM in the 5 GHz 802.11a/n/ac frequency band, including all losses of the antenna switch and input/output impedance matching network. Combined with high gain (33 dB), high-efficiency (170 mA at +17 dBm in Low-Current Mode), extremely low EVM floor (<1.5%), excellent thermal stability, and multiple mode controls with simple CMOS logic, the RFX5000 and RFX5000B outperform all 5GHz front-end solutions on the market today from any existing technology, including Gallium Arsenide (GaAs) or Silicon Germanium (SiGe). Additionally, the RFX5000 and RFX5000B solutions are pin-to-pin compatible with existing incumbent 5GHz technologies.

The RFX8420 and RFX8421 are designed and optimized for dual-mode Wi-Fi/Bluetooth applications that are now standard features in mainstream smartphones. Housed in ultra-compact 2.5 x 2.5 x 0.45 mm QFN package, and pin-compatible with multiple GaAs-based front-end modules (FEM) on the market, the RFX8420 and RFX8421 also deliver state-of-the-art RF performance, including excellent EVM power and efficiency. Additionally, the RFeICs have 0.8dB in total insertion loss for the SP3T switch with all DC-blocking capacitors integrated on-chip.

RFaxis continues to expand its 2.4 GHz and Sub-GHz RFeIC portfolio for ZigBee, smart energy/smart home, wireless sensor network and generic ISM-band applications. The RFX1010 is an ultra-broadband half-watt RFeIC which operates from 780 to 960MHz. The new RFX2411 and RFX2410 add antenna diversity capability to the company's extremely popular RFX2401C, without any compromise in output power/efficiency or increase in package size.

"RFaxis has broken all of the technical barriers that have prevented bulk CMOS to beat the performance of incumbent technologies, such as GaAs and SiGe,” stated Mike Neshat, chairman and CEO of RFaxis. “We are not only starting full-scale deployment and production of these seven new RFeICs - ranging from sub-GHz ZigBee to 5 GHz 11n/ac MIMO - but will also be sampling our RFX8825 RFeIC to support the upcoming migration to dual-band/dual-mode, Wi-Fi designs in smartphones and tablets, as well as our RFX240 high-power linear power amplifier to capture the Wi-Fi AP/router and outdoor hotspot markets. By offering the best-in-class performance, lowest cost, highest level of integration, and pin-to-pin compatible solutions with our competitors, RFaxis is going to 'turn off the GaAs' and bring pure CMOS technology center stage for the RF front-end market. Our goal is to be the world’s preferred RF front-end solution provider and displace all competing solutions in 2013."

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