Items Tagged with 'cmos'

Subscribe

IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.

Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), announced the signing of a collaborative agreement with Murata Manufacturing Co. on a multi-sourcing arrangement for RF switches based on Peregrine's proprietary UltraCMOS® technology.

M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced a new single channel CMOS Driver for Microwave Switching Applications.

Linear Technology Corp. introduces the LTC6957, a DC to 300 MHz dual output buffer/driver/logic translator, ideal for converting sine waves into low phase noise logic level signals. Prior solutions were unable to perform this conversion without introducing a significant amount of jitter.

Coupling Wave Solutions S.A. (CWS) announced that STMicroelectronics has adopted the WaveIntegrity™ analysis tools to remove risk caused by on-chip, package and PCB parasitics. Following multiple evaluations, STMicroelectronics is deploying WaveIntegrity across multiple groups.

Nujira Ltd. has released the details of significant test results that demonstrate how Envelope Tracking (ET) technology unlocks the potential of RF CMOS PAs for high end 3G and 4G smartphone applications.

Analog Devices Inc. introduced a clock buffer and divider IC that combines high-speed, extremely low jitter (41 fs across the 12-kHz to 20-MHz band) and selectable division capability.

As the result of joining forces within the HiTeK project to combine the advantages of silicon-based CMOS circuits from the IHP with those of indium-phosphide circuits from the FBH, the partners have successfully integrated both circuits on a semiconductor wafer.

The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).  Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.

Sapphire CMOS technology, SMT packaging of microwave ICs and envelope tracking techniques were just some of the highlights of the November ARMMS conference.