Buyer's Guide

Microwave products for radar, electronic warfare, industrial, medical, communications and scientific applications.

This paper discusses the FDTD method to simulate the behavior of plasma materials using Remcom’s XFdtd 3D EM Simulation Software and presents validation in one- and three-dimensions.

Check out the latest extensive presentation providing a detailed overview of RF & Microwave Filter and Switch Filter Banks standard products and design capabilities.

This document outlines the procedure and profile setting of the RadioThorium module for baseband TDD and IF-mode FDD configurations.  Richardson RFPD’s RadioThorium is a family of general-purpose, high-performance, standalone frequency converters. The first RadioThorium product, created in partnership with Signal Craft Technologies (SCT), covers an output frequency range of 24 GHz to 44 GHz. The module is designed to interface directly with an external baseband platform, such as Analog Device’s MxFE (Mixed Signal Front-End) or similar software defined radio platforms.

The global RF power semiconductor market is presently valued at approximately $1.5 billion. These devices provide the RF amplification for a wide variety of applications, from MRI to broadcast transmitters, radar systems and cellular base stations. Choosing the right component category is critical to developing amplifier systems that meet performance, size, cost and time-to-market requirements, and there are multiple options to consider. This paper covers component construction options available for all RF power amplifier technologies, including but not limited to GaN. There are three broadly available RF power semiconductor devices−discrete transistors, impedance matched field effect transistors (IMFETs), and MMIC amplifier ICs. Part I of this paper addressed the unique value proposition for each device. Now the discussion turns to applications and use cases.

The global RF power semiconductor market is presently valued at approximately $1.5 billion. These devices provide the RF amplification for a wide variety of applications, from MRI to broadcast transmitters, radar systems and cellular base stations. Choosing the right component category is critical to developing amplifier systems that meet performance, size, cost and time-to-market requirements, and there are multiple options to consider. This paper covers component construction options available for all RF power amplifier technologies, including but not limited to GaN.  There are three broadly available RF power semiconductor devices−discrete transistors, impedance matched field effect transistors (IMFETs), and MMIC amplifier ICs. Each device has a unique value proposition that will be addressed in this paper.

Engineers are constantly under pressure to design smaller, lower-power and higher-performance devices. A lack of time and resources are often also part of the challenge.   Richardson RFPD engineers and others have teamed with Analog Devices to introduce a new, highly integrated transceiver and have built SoMs and RF front ends to interface with it. Our collective goal is to provide engineers with small, low-power, high-performance starting points for their own projects that will reduce design time and the amount of needed resources.

The benefits of Wolfspeed GaN-on-SiC RF amplifiers have been well-documented—they provide outstanding power density, reliability and better efficiency than their traditional GaAs-based counterparts. In this paper, a GaN-on-SiC-based RF amplifier is optimized for 4.4–5.0 GHz troposcatter applications.