5G Power Amplifier Design and Modeling for mmWave GaN DevicesBy Valeria Brunel and Eric Leclerc, UMS, France and David Vye, AWR Group, National Instruments, El Segundo, Calif.Subscribe
Modeling of InP HBTs with an Improved Keysight HBT ModelBy Jincan Zhang, Min Liu, Jinchan Wang, Liwen Zhang and Bo Liu, Henan University of Science and Technology, Luoyang, China
