WIN Semiconductors Announces Linearity Optimized 0.12 µm GaN Power Process June 4, 2025 0 Comments WIN Semiconductors Corp announces the launch of its NP12-1B, a 0.12 μm gate-length depletion-mode GaN HEMT technology on SiC substrates. Read More
Mitsubishi Electric to Expand Product Range of Ku-Band GaN HEMTs February 22, 2021 0 Comments Mitsubishi Electric is adding two 30 W, Ku-Band GaN HEMTs to its portfolio for SATCOM earth stations. The devices will be available on March 15.Read More
