NXP Semiconductors N.V. introduced the industry’s largest portfolio of broadband 28 V LDMOS two-stage, dual-path Doherty-optimized Integrated Circuits (ICs) for small cell base stations. As part of NXP’s leading RF power transistor portfolio, the new LDMOS ICs are designed to provide RF power, efficiency, and gain in all current and proposed frequency bands, from 700 to 3800 MHz, with RF output power of 2.5 to 12 W.
