Pat Hindle, MWJ Editor
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Pat Hindle is responsible for editorial content, article review and special industry reporting for Microwave Journal magazine and its web site in addition to social media and special digital projects. Prior to joining the Journal, Mr. Hindle held various technical and marketing positions throughout New England, including Marketing Communications Manager at M/A-COM (Tyco Electronics), Product/QA Manager at Alpha Industries (Skyworks), Program Manager at Raytheon and Project Manager/Quality Engineer at MIT. Mr. Hindle graduated from Northeastern University - Graduate School of Business Administration and holds a BS degree from Cornell University in Materials Science Engineering.

Industry's First SMT GaN Module for CATV

November 16, 2011

I don't normally point out specific products but I like to highlight new technology or products first to the market. RFMD has introduced the industry’s first surface mount GaN power doubler module aimed at CATV networks. It uses a combination of GaN HEMT and GaAs pHEMT technologies and provides high output capability from 45-1003 MHz with excellent distortion performance.


  • 45 to 1003 MHz GaAs/GaN Power Doubler Module

  • 61dBmV Rated Power

  • High Current Mode: 450mA at 24VDC

  • Low Current Mode: 350mA at 24VDC

  • Min. Gain: 22.5dB at 1GHz

  • Saves ≈ 50% PCBA Area versus SOT115J (with external baluns) 182 mm² versus 362 mm²


  • CATV Optical nodes

  • CATV Line amplifiers

RFCM2680 Product Announcement from RFMD on Vimeo.

Microwave Journal will be covering this subject in depth in our April issue next year.

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