A variety of IV measurements performed inder DC and pulsed conditions that illustrate the strong influence of frequency dispersion and self-heating effects on device characteristics
DC and Pulsed IV Characteristics of GaAs MESFET Devices New measurement procedures using a DC and pulsed IV characterization system illustrate the significant effect that the thermal and frequency dispersion phenomena in GaAs MESFETs have on the IV characteristics of the device. The new procedures presented enable the effects...
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