We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
II-VI Inc. announced a strategic collaboration with Sumitomo Electric Device Innovations Inc. (SEDI) to establish a vertically integrated 150 mm wafer fabrication platform to manufacture GaN on SiC HEMT devices for 5G wireless networks.
ABI Research forecasts markets for pulsed RF power devices up to 4 GHz will show continued solid growth over the next five years and exceed US$275 million by 2023.
Keysight Technologies announced that the company's 3D planar EM simulator, Momentum, has been certified for GlobalFoundries' 22 nm fully-depleted silicon-on-insulator (FD-SOI) technology, 22FDX®.
BAE Systems has signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for the first phase of a technical effort to transition GaN semiconductor technology developed by the U.S. Air Force to BAE System's Advanced Microwave Products (AMP) center.
Kaga Electronics Co. Ltd. and Fujitsu Semiconductor Ltd. (FSL) announced that they have entered into a definitive agreement whereby Kaga Electronics acquires 70 percent shares in Fujitsu Electronics Inc. (FEI) from FSL.
EpiGaN will exhibit and highlight its latest GaN epiwafer developments tailored to 5G applications at the Semicon Taiwan show in Taipeh (September 5-7), and at the European Microwave Week (EuMW) 2018 in Madrid (September 23-28).
Fujitsu Limited and Fujitsu Laboratories Ltd. announced they have developed a crystal structure that both increases current and voltage in GaN HEMTs, effectively tripling the output power of transistors used for microwave transmitters.
RSS
