Aerospace and Defense Channel - Technical Articles, Product Innovations, Resources & Technologies

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The U.S. Navy awarded Lockheed Martin a $1.05 billion, five-year contract to provide more than 200 digital cockpits and integrated mission systems and sensors for the Navy MH-60R “Romeo” and MH-60S “Sierra” helicopters.

Matching circuits for antennas and other RF components based on 3D models can now be easily optimized by designers who use FEKO together with Optenni Lab.

TriQuint Semiconductor Inc. announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology.

Thales has completed the acquisition of Tampa Microwave, a privately held company specializing in tactical satellite communications terminals and related products for defense, government, and commercial customers.

BAE Systems and the Malaysian Industry Group High Technology (MIGHT) have signed a Memorandum of Understanding to strengthen industrial cooperation between the UK and Malaysia

In what could be considered a 'world record' Newtec has demonstrated a 310 Mbps transport over a 36 Mhz transponder. Tests and validations were carried out using existing antennae and power infrastructure on Yahsat’s Y1A.

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has developed a rugged transistor technology capable of surviving the industry’s most severe robustness tests without significant device degradation.

Custom MMIC is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions Inc. This product family targets L- and S-Band applications from 960 to 3500 MHz and reinforces M/A-COM Tech's rich heritage of leadership in power hybrid technology.

Raytheon Co. has been awarded an 18-month, $1.8 million contract by the DARPA to develop next-generation GaN devices bonded to diamond substrates.