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GaN RF power semiconductor devices gained meaningful market share over the last two years, despite a lackluster 2016, with 2017 promising further growth. ABI Research forecasts GaN RF power devices will capture nearly 25 percent of all high power semiconductors for mobile wireless infrastructure in 2017.
The new R&S RT-ZVC02/04 multichannel power probe can measure across large current and voltage ranges without having to switch ranges, making it possible to monitor the power consumption of chipsets, radio modules and wearables such as smartwatches. When used in combination with an R&S RTE or R&S RTO oscilloscope, the current drain can be clearly correlated with analog and digital control signals, enabling developers to optimize the battery life of such wearables and wireless devices early in the development cycle.
Imec announced that 200 mm GaN on Si e-mode power devices showed no degradation after heavy ion and neutron irradiation, testing performed in collaboration with Thales Alenia Space. Imec's e-mode devices have a pGaN gate architecture.
Richardson RFPD, Inc. announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers, designers, suppliers and individuals involved in marketing and sales.
Empower RF released a scalable pulsed L-Band power amplifier with an expandable system hardware architecture designed to save money — "Buy only the power needed today" and add power amplifier blocks later when more output power is required.
RFuW Engineering Ltd., an industry leading supplier of high power, SMT RF limiters and switches, announces the release of the MSW2T-2735-196/-197 Ultra High Power (+60 dBm) S-Band switches and the RFLM-262322HC-151 Ultra High Power (+57 dBm) S-Band limiter (+57 dBm).
Millitech, a microwave brand of Smiths Interconnect, announced the release of a new gallium nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB.
Keysight announced three new PXIe chassis with different sizes and performance characteristics. The new chassis include the 10-slot Gen 3 chassis, designed for high-performance, benchtop and R&D applications; the cost-effective 5-slot Gen 1 chassis; and the redesigned 18-slot Gen 2 chassis, with improved power supply and improved system integration.
Millitech, a microwave brand of Smiths Interconnect, released new GaN power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W output power and up to 20% PAE, typical gain is from 15 to 40 dB.
Millitech, a microwave brand of Smiths Interconnect, announced the release of a new gallium nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB. 
Millitech, a microwave brand of Smiths Interconnect, released new GaN power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W output power and up to 20% PAE, typical gain is from 15 to 40 dB.