Articles Tagged with ''ldmos''

Freescale Semiconductor, a global leader in radio frequency (RF) power transistors, announced the availability of 11 new commercial RF power LDMOS products that can meet the requirements of U.S. defense  electronics applications. This is the first set of products released as part of the company’s strategic defense initiatives for its RF power business, announced in June 2013.

Freescale Semiconductor introduces two new Airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package. 

AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.

NXP Semiconductors has launched its new Gen8+ LDMOS RF power transistors – an expansion of its eighth-generation LDMOS product line for wireless base stations with a strong focus on TD-LTE.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new laterally diffused metal oxide semiconductor (LDMOS) transistor targeting land mobile radio from Freescale Semiconductor Inc.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for new package options on an RF power LDMOS transistor from Freescale Semiconductor Inc. (Freescale).

Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.

Introduction to a commercially available 48 V LDMOS transistor, developed for low cost, high power cellular applications