With its seventh-generation high voltage (HV7) RF LDMOS technology, Freescale Semiconductor has achieved the RF power transistor performance required for use in WiMAX base stations operating in the 3.5 GHz band. Freescale claims this achievement marks the first time RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology from any manufacturer has met these challenges.

Freescale, which already offers a portfolio of 12 V GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) products, plans to continue development of high voltage GaAs PHEMT technology that will result in higher-power GaAs devices for use in WiMAX system designs, as well as other applications between 2 and 6 GHz.

By offering power transistors in RF LDMOS and GaAs PHEMT technology, Freescale’s RF solutions support virtually any high power wireless infrastructure application – with LDMOS performance up to 3.8 GHz and GaAs PHEMT performance up to 6 GHz. “With the latest advancements in our HV7 RF LDMOS technology, Freescale is well positioned to serve the future of WiMAX and other high frequency markets,” said Gavin P. Woods, vice president and general manager of Freescale’s RF Division. “Our high voltage GaAs technology developments will continue to provide the highest level of efficiency of any competitive products in the marketplace, while extending our infrastructure presence to 6 GHz.”

Samples of the initial 3.5 GHz LDMOS device are available now. The MRF7S38075H is a 75 W P1dB RF transistor capable of 42 dBm (16 W) average power while meeting WiMAX performance requirements over the 3.5 GHz band. In addition, samples of 40 W and 10 W P1dB 3.5 GHz devices are expected end of Q1, 2006. These three advanced LDMOS devices round out Freescale's already existing portfolio of RF power transistors targeting the emerging WiMAX/WiBRO bands at 2.3, 2.5 and 3.5 GHz.