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Published Tuesday, August 16, 2008 | Last Update 9.16.08 Here are your replies to the September Expert Advice column
You heard the buzz about GaN and looked at suppliers, got an evaluation board on the bench and saw great results. As always your schedule is tight so you have to ask the question: I’ve worked with LDMOS for years and know what to expect.
Reference Guide Winner
Comments: A good starting point for designers transitioning from LDMOS to GaN -- but what about the GaAs-to-GaN transitioners ? Why are most GaN devices specified by P3dB or Psat ? What is the relation between GaN's P3dB (or Psat) and P1dB or IP3 ? What about their intermodulation performance in linear amplifier applications ?
Hari Kumar, Bharat Electronics 10/1/2008 3:05:39 PM
Response from the Author:
Reference Guide Winner
Comments: I think the stability of the circuit is very important before the dessign of power amplifier.the s parameter value is very important, then we can design the biasing circuit easily. Compared to other devices HEMT efficiency is very high,we can increased by impedance matching circuits. Canu suggest the stability of the circuits??And what type of biasing circuit was used in your circuits and also what type of power amplifier that is class b,class c or class e etc.which one is suitable??
jisha mv, kmct college of enginnering, 10/2/2008 3:42:07 AM
Response from the Author:
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