RFMW announced design and sales support for a high-power GaN transistor from Qorvo. The QPD1028L delivers > 750 W of saturated power from 1.2 to 1.4 GHz for military and civilian L-Band radar systems. Efficiency at Psat is 67 to 70 percent with 17 to 18 dB of gain. The QPD1028L is capable of CW or pulsed operation with 65 volt bias. This input-pre-matched device is housed in an industry standard air cavity package.