Altum RF, a new fabless semiconductor company that is designing high performance mmWave to digital solutions for next-generation markets and applications, will be exhibiting at IMS2019 in Boston, Mass. from June 4-6, 2019. At their booth, customers can learn more about their products, including the ARF1307C7, a 2 to 20 GHz GaN distributed amplifier that delivers 10 W of saturated output power, and the ARF1202Q2, a 39 GHz low noise amplifier for 5G mmWave infrastructure.

Altum RF’s ARF1307C7 is a packaged GaN distributed amplifier for applications from 2 to 20 GHz. The amplifier provides 20 dB small signal gain, 10 W saturated output power with 14 dB of power gain and 25 percent power added efficiency. The ARF1307C7 features a robust, lead-free and RoHS-compliant 7 mm x 7 mm ceramic QFN package with excellent thermal and electrical properties.

The ARF1307 is suitable for higher performance commercial and defense-related applications, such as test & measurement equipment, EW and commercial or defense radar systems.

The ARF1202Q2 is a low noise amplifier designed for high data-rate applications. With 19 dB of linear gain, 2.4 dB noise figure and low-current operation, it is well suited to demanding, high-order modulation schemes such as mmWave 5G. The circuit draws 15 mA from a 3.3 V DC supply. The part is internally matched to 50 Ω with ESD protection. RF ports are DC grounded. A VBIAS pin can be connected to the 3.3 V supply, or connected to ground to power down the device.

The part is RoHS compliant and built with the latest manufacturing techniques for reliability and quality control.

Altum RF will also Conduct a MicroApps Session:

THMA61: Broadband mmWave power–making the most of III-V technology
Speaker: Tony Fattorini
Location: Booth 200
Time: Thursday, June 6, 12:45 p.m.