RFMW Ltd. announces design and sales support for a high-power GaN transistor from Qorvo. The QPD1025 offers 1563 W of P3 dB RF power from 1000 to 1100 MHz, satisfying IFF transponders and other avionics applications. 65 V operation offers higher efficiency (77.4% PAE) compared to LDMOS transistors for improved system performance. The QPD1025 provides 22 dB of linear gain and is input pre-matched for ease-of-use.
Capable of both CW and pulsed operation, it’s available in an ‘eared’ package as the QPD1025L.
For more in-depth information on this product visit our website at: http://www.rfmw.com
