The model NE72218 miniature GaAs MESFET delivers high output power of 15.0 dBm at 12 GHz and low phase noise of -90 dBc/Hz at 10 kHz offset. The MESFETs are best suited for oscillator and amplifier applications and feature a 0.8 mm recessed gate and triple epitaxial technology. Housed in an ultraminiature plastic surface-mount SOT-343 package, the NE72218 is fabricated using ion implantation for improved RF and DC performance, reliability and consistency. Price: $1.57 (3000). Delivery: stock.
California Eastern Laboratories,
Santa Clara, CA
(408) 988-3500.

2 GHz RF Transistors
The models PTF 10120, 10043, 10035 and 10112 high power RF transistors are optimized for amplification of PCS signals. These 2 GHz wideband RF transistors are highly linear, gold metallized, silicon LDMOS FETs. Designed for amplifying either CDMA or TDMA signals, these devices support new digital modulations as well as traditional analog applications. The highest power device in the family is the PTF 10120. This GOLDMOS™ device is in a wideband push-pull configuration and displays an intermodulation distortion level of greater than -30 dB for peak envelope power levels up to 120 W. The device has 11 dB of linear gain and a saturated power capability of more than 150 W. The highly reliable, field-proven, full gold metal system used on all of the devices in this family extends the mean time to failure to well over 6000 years.
Ericsson Components,
Morgan Hill, CA
(408) 778-9434.

Data Acquisition Device
The DAQPad™ -6070E multifunction data acquisition device (DAQ) features eight digital input/output lines, two 24-bit counter timers, 12-bit analog/digital resolution and a 1.25 Msps sampling rate. Available with mass termination or a BNC-equipped option, the device features a 68-pin shielded connector to connect signals and includes an AC-to-DC power adapter and an optional rechargeable battery pack or 9 to 25 V DC supply. The DAQ connects directly to Windows 98 PCs equipped with an IEEE-1394 serial port or PCI-to-1394 adapter and offers engineers and scientists a portable, easily installed and configured solution for computer-based measurement applications. As a FireWire product, the unit is hot pluggable and delivers an easy plug-and-play configuration. Price: starting at $1995.
National Instruments,
Austin, TX
(800) 258-7022.

RF LDMOS Devices
The MRF21000 series RF LDMOS devices are fully characterized and individually tuned to operate at frequencies from 2.0 to 2.4 GHz, and are suitable for all linear transmitter formats. The RF LDMOS devices include the model MRF21060, the first ever RF LDMOS single-ended and 60 W device operating at 2170 MHz, which uses the company's fourth-generation RF LDMOS process to support designs for the emerging third-generation (3G) market, including W-CDMA and UMTS base stations. The complete characterization of the devices makes them easier to use in applications where matched device performance is important. The 30 W MRF21030, the 90 W MRF21090 and the flagship MRF21120 internal impedance-matched push-pull transistor that provides 120 W power (peak) and 14 W power while meeting the W-CDMA mask also are included in the family. Price: $140 for the MRF21060 (10,000).
Motorola Semiconductor Products Sector,
Phoenix, AZ
(602) 244-7108.

RF Power MOSFET Transistors
The models SA741 (35 W), SM746 (175 W) and SR746 (300 W) 50 V RF power MOSFET transistors exhibit low capacitance, which makes them easier to broadband and use at frequencies from less than 1 MHz to 500 MHz. The modular design allows combinations of the same die to produce output power ranging from 35 to 300 W. This modular die concept reduces delivery time and extends the product availability lifetime.
Polyfet RF Devices,
Camarillo, CA
(805) 484-4210.

SiGe Transistors
The HBT30 series low phase noise silicon-germanium (SiGe) transistors are designed for WLAN, 3G, W-CDMA, LMDS, point-to-point radio satellite, cable modem and fiber-optic systems achieving higher data transfer rates. At 10 GHz, these transistors exhibit typical residual phase noise of -142 dBc/Hz at 100 MHz and -160 dBc/Hz at 10 kHz offsets. Nominally rated at 5, 10 or 20 mA, the transistors provide a maximum output power of +1, +7 or +13 dBm, respectively, and are capable of operating at supply voltages as low as 1 V. Versions are available as die and in SC-70 (SOT-343) and Micro-X packages.
SiGe Microsystems Inc.,
Ottawa, Ontario, Canada
(613) 748-1334.

The models Si4880DY, Si4800DY and Si4890DY pulse-width-modulation-optimized Little Foot® power MOSFETs combine lower on resistance and gate charge specifications with record switching speeds, which together ensure maximum efficiency in power conversion circuits across all typical load ranges and are designed specifically for notebook computer and central processing unit point-of-use DC-to-DC conversion applications. The Si4880DY offers on resistance of 8.5 mW at a 10 V gate drive with a gate charge of 19.5 nC and turn-off times of 46 ns. The Si4800DY provides turn-off times of 22 ns with on resistance of 18.5 mW and a gate charge of 8.7 nC. The Si4890DY features on resistance of 12 mW, gate charge of 14 nC and turn-off times of 35 ns. Price: 71¢ (100,000). Delivery: eight to ten weeks.
Vishay Siliconix,
Santa Clara, CA
(800) 554-5565, ext. 10 or (408) 567-8220, ext. 10.